NMC508DTE Deep Silicon Trench Etch System

System Overview
The NMC508DTE is a specialty etching system developed for silicon power devices which is predominantly used for deep trench etching of IGBT devices, MOSFET devices, and Super Junctions. NMC 508DTE equipment is aimed at a single-step smooth etching process to ensure the voltage performance of power devices.

 NMC508DTE Deep Silicon Trench Etch System

NMC508DTE Deep Silicon Trench Etch System

Substrate Size:
Applications compounds:
Technology Markets:

200 mm
Silicon
Power IC

Processes
  • Deep silicon trench etch
Production Advantages
  • Configured low frequency bias to achieve a single-step smooth silicon etching process up to 25:1
  • System achieves high etching selectivity and low plasma damage with specially designed lower electrode
  • Magnetic shield ensures high plasma uniformity across the wafer
  • Hardware & software control enable tight control of top/bottom profiles, sidewall angle, and high aspect ratios