NMC508DTE Deep Silicon Trench Etch System
System Overview
The NMC508DTE is a specialty etching system developed for silicon power devices which is predominantly used for deep trench etching of IGBT devices, MOSFET devices, and Super Junctions. NMC 508DTE equipment is aimed at a single-step smooth etching process to ensure the voltage performance of power devices.
NMC508DTE Deep Silicon Trench Etch System
Substrate Size:
Applications compounds:
Technology Markets:
200 mm
Silicon
Power IC
Processes
- Deep silicon trench etch
Production Advantages
- Configured low frequency bias to achieve a single-step smooth silicon etching process up to 25:1
- System achieves high etching selectivity and low plasma damage with specially designed lower electrode
- Magnetic shield ensures high plasma uniformity across the wafer
- Hardware & software control enable tight control of top/bottom profiles, sidewall angle, and high aspect ratios