NMC508C Silicon Etch System
Substrate Size:
Applications compounds:
Technology Markets:
200 mm
Silicon
Analog IC, Digital IC, Power IC
Processes
- Shallow trench isolation (STI) etch
- Polysilicon gate etch
- Deep trench etch
- Contact trench etch
- Tungsten gate etch
- Floating gate etch
- Etch back
- Zero mark etch
Production Advantages
- Planar ICP with automatic matching and magnetic shield generates high plasma uniformity across the wafer
- Independent control of center and edge gas injection optimizes etch rate uniformity
- Symmetrical lining design provides better etch uniformity
- Robust end point detection system maximizes signal-to-noise performance