GSE C200 PLASMA ETCHER
System Overview
GSE C200 is an ICP general etcher for silicon and III-V materials, designed with ultra-high density plasma sources for higher etch rates.
In addition, the GSE C200 can delayer a wide variety of layers on substrates / chips up to 8” diameter to conduct a thorough failure analysis on low yield wafers and devices.
GSE C200 Plasma Etch System
Substrate Size:
Applications compounds:
Technology Markets:
50 mm, 100 mm, 150 mm, 200 mm
Down to wafer pieces for failure analysis
Si, Dielectric, Polymer, III-V, and more
Power IC, LED, Failure Analysis, and R&D
Processes
- Passivation etch
- Poly etch
- Nitride etch
- Power GaN devices
- GaAs VCSEL device mesa etching
- GaAs HBT/pHEMT mesa and back hole etching
- InP grating and waveguide etching
- Failure analysis
Production Advantages
- Process module design optimizes plasma uniformity
- Process chamber design improves maintainability
- Customizable high-precision bias RF—precisely control DC Bias to achieve low-speed, low-damage etching of GaN and other materials
- Lower electrode heating: 20o ~ 180oC, to meet III-V etching requirements
- Automatic matching radio frequency system to achieve fast, effective and accurate matching to ensure process repeatability