Furnaces for Power IC Technology

NAURA Akrion’s complete product line of horizontal, HORIS, and vertical, FLOURIS, furnaces for Power IC technology provide diffusion, oxidation, annealing & alloying capabilities for substrate sizes from 100 – 200 mm. Both products offer advanced process control and safety features to meet today’s challenging requirements all supported on a modern, sustainable platform.

Power ICs control the conversion of electric power from one form to another. They are the intermediary between a Source (generates power) and a Load (consumes power). Power ICs serve as either a switch (MOSFET, IGBT & BJT) or a rectifier (diodes & thyristors) and can be manufactured from a variety of materials to include silicon, silicon carbide or gallium nitride with several promising compound semiconductor materials in the wings. Today, we all rely on Power ICs for everyday life essentials such as cellphone, tablet and laptop chargers to portable battery packs to hybrid vehicles. Applications are rapidly expanding in the energy (PV, Grid, Wind), transportation (Rail, Automotive, Ships), consumer markets. The increasing capabilities of Power ICs to handle higher voltages, currents and frequencies with reduced power loss is rapidly expanding adoption in multiple new fields.

HORIS Diffusion/Oxidation Horizontal Furnace

 HORIS L6371 Vertical Furnace

HORIS L6371 Vertical Furnace

The HORIS Series of horizontal furnaces are a highly cost-effective line of diffusion, oxidation, annealing, alloying systems that can be used in a wide variety of applications and substrate types/sizes.

FLOURIS 201 Anneal/Oxidation Vertical Furnace

 FLOURIS 201 Vertical Furnace

FLOURIS 201 Vertical Furnace

The FLOURIS 201 Vertical Anneal/Oxidation Furnace provides medium and high temperature annealing or oxidation of 200 mm silicon wafers for advanced IC devices. Based upon Naura’s popular 300 mm THEORIS 302, the FLOURIS 201 provides 200 mm fabs with the same reliability and process control in the growth of silicon dioxide films for buffer dielectric, sacrificial oxide, and gate oxide layers in front-end of line processing.